Title :
Investigation of interconnect capacitance characterization using charge-based capacitance measurement (CBCM) technique and 3-D simulation
Author :
Sylvester, Dennis ; Chen, James C. ; Hu, Chenming
Author_Institution :
California Univ., Berkeley, CA, USA
Abstract :
This paper examines the recently introduced Charge-Based Capacitance Measurement (CBCM) technique through use of a 3-D interconnect simulator. This method is shown to have several advantages over extensive computer simulation in determining parasitic interconnect capacitances, which are the dominant source of delay in modern circuits. Metal to substrate, interwire, and interlayer capacitances are each discussed and overall close agreement is found between CBCM and 3-D simulation. Full process interconnect characterization is one possible application of this new compact, high-resolution test structure
Keywords :
application specific integrated circuits; capacitance measurement; circuit analysis computing; delays; digital simulation; integrated circuit interconnections; integrated circuit measurement; integrated circuit noise; integrated circuit testing; 3D simulation; charge-based capacitance measurement; delay; high-resolution test structure; interconnect capacitance characterization; interconnect simulator; interlayer capacitance; interwire capacitance; metal to substrate capacitance; parasitic interconnect capacitances; process interconnect characterization; Capacitance measurement; Circuit simulation; Circuit testing; Crosstalk; Current measurement; Delay; Integrated circuit interconnections; Integrated circuit measurements; Parasitic capacitance; Semiconductor device measurement;
Conference_Titel :
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-3669-0
DOI :
10.1109/CICC.1997.606674
