Title :
A GaAs HBT ultra-linear video amplifier gain cell
Author :
Siu, Elton W. ; Wiggins, Rick H. ; Oki, Aaron K. ; Kim, Michael E.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A GaAs heterojunction bipolar transistor (HBT) ultralinear video amplifier gain cell fabricated in a 3-μm technology is discussed. The circuit design and fabrication are described. The gain cell was fabricated in a relaxed, 3-μm, self-aligned-base, ohmic-metal process using molecular beam epitaxy. Wafer probe test data demonstrate harmonic distortion <-80 dBc with 10 MHz sinusoid, with Vpp of 4 V delivered into a 400-Ω load dissipating 2.0 W
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; molecular beam epitaxial growth; video amplifiers; 3 micron; GaAs; HBT; MBE; circuit design; fabrication; heterojunction bipolar transistor; molecular beam epitaxy; ohmic-metal process; self-aligned-base; ultralinear gain cell; video amplifier; Bandwidth; Broadband amplifiers; Frequency; Gallium arsenide; Harmonic distortion; Heterojunction bipolar transistors; Performance gain; Probes; Space technology; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69474
