Low cost GaAs PHEMT MMICs for millimeter wave sensor applications

Author

Siweris, H.J. ; Werthof, A. ; Tischer, H. ; Schaper, U. ; Schafer, A. ; Verweyen, L. ; Grave, T. ; Bock, G. ; Schlechtweg, M. ; Kellner, W.

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

fYear

1998

fDate

11-8 June 1998

Firstpage

283

Lastpage

286

Abstract

A chip set for millimeter-wave sensor applications, especially automotive radar systems, is described. It consists of a highly integrated transceiver chip, a voltage controlled oscillator, a harmonic mixer and a medium power amplifier. The MMICs operate in the 76-77 GHz frequency range and have been fabricated by a production oriented GaAs PHEMT technology.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; MMIC oscillators; MMIC power amplifiers; field effect MIMIC; gallium arsenide; millimetre wave detectors; millimetre wave mixers; millimetre wave oscillators; millimetre wave power amplifiers; radar equipment; transceivers; voltage-controlled oscillators; 76 to 77 GHz; EHF; GaAs; GaAs PHEMT MMICs; GaAs pseudomorphic HEMT technology; MM-wave chip set; automotive radar systems; harmonic mixer; highly integrated transceiver chip; medium power amplifier; millimeter wave sensor applications; voltage controlled oscillator; Automotive engineering; Costs; Gallium arsenide; MMICs; Millimeter wave radar; Millimeter wave technology; PHEMTs; Radar applications; Sensor phenomena and characterization; Sensor systems and applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682099

Filename

682099