Title :
Low temperature thermocompression bonding based on copper nanostructure for 3D packaging
Author :
Cai, Mingxian ; Chen, Mingxiang ; Liu, Sheng
Author_Institution :
Sch. of Mech. Sci. & Eng., HUST, Wuhan, China
Abstract :
Cu-Cu thermocompression bonding has become an important technology for 3D packaging and integration. In this paper, a novel low temperature thermocompression bonding technology using nanostructure Cu layer was presented. By selective dealloying of Cu-Zn alloy in dilute hydrochloric acid, porous nanostructure Cu layer was fabricated on silicon substrate. Scanning electron microscopy (SEM) and X-ray fluorescence (XRF) analysis revealed that the dealloying time strongly influenced the nanostructure. Low temperature thermocompression bonding at 280°C was achieved using the nanostructure Cu layer with no void and bonding interface, bonding strength test showed promising properties compared with that of flat Cu layer.
Keywords :
X-ray fluorescence analysis; copper alloys; integrated circuit packaging; lead bonding; scanning electron microscopy; three-dimensional integrated circuits; zinc alloys; 3D packaging; Cu-Cu; Cu-Zn; SEM; X-ray fluorescence analysis; low temperature thermocompression bonding; nanostructure; scanning electron microscopy; Bonding; Copper; Silicon; Surface morphology; Temperature; Zinc;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6066789
