Low temperature thermocompression bonding based on copper nanostructure for 3D packaging

Author

Cai, Mingxian ; Chen, Mingxiang ; Liu, Sheng

Author_Institution

Sch. of Mech. Sci. & Eng., HUST, Wuhan, China

fYear

2011

fDate

8-11 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

Cu-Cu thermocompression bonding has become an important technology for 3D packaging and integration. In this paper, a novel low temperature thermocompression bonding technology using nanostructure Cu layer was presented. By selective dealloying of Cu-Zn alloy in dilute hydrochloric acid, porous nanostructure Cu layer was fabricated on silicon substrate. Scanning electron microscopy (SEM) and X-ray fluorescence (XRF) analysis revealed that the dealloying time strongly influenced the nanostructure. Low temperature thermocompression bonding at 280°C was achieved using the nanostructure Cu layer with no void and bonding interface, bonding strength test showed promising properties compared with that of flat Cu layer.

Keywords

X-ray fluorescence analysis; copper alloys; integrated circuit packaging; lead bonding; scanning electron microscopy; three-dimensional integrated circuits; zinc alloys; 3D packaging; Cu-Cu; Cu-Zn; SEM; X-ray fluorescence analysis; low temperature thermocompression bonding; nanostructure; scanning electron microscopy; Bonding; Copper; Silicon; Surface morphology; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1770-3

Electronic_ISBN

978-1-4577-1768-0

Type

conf

DOI

10.1109/ICEPT.2011.6066789

Filename

6066789