Title :
Proposal of up-to-date standards on methods of measuring noise in linear two-ports
Author :
Martines, G. ; Sannino, M.
Author_Institution :
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
fDate :
June 27 1994-July 1 1994
Abstract :
One of the most interesting topics for microwave community is the characterization of low-noise transistors. After so many years, the standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is proposed here as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters from noise figure measurements only is presented.<>
Keywords :
S-parameters; electric noise measurement; gain measurement; measurement standards; multiport networks; semiconductor device models; semiconductor device noise; solid-state microwave devices; IEEE; gain; linear two-ports; low-noise transistors; measurement standards; noise figure measurements; noise measurement; scattering parameters; standards; Data processing; Gain measurement; Measurement standards; Microwave measurements; Microwave transistors; Noise figure; Noise measurement; Proposals; Scattering parameters; Tuners;
Conference_Titel :
Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-7803-1984-2
DOI :
10.1109/CPEM.1994.333208
