DocumentCode :
2182412
Title :
3D Finite-Element Analysis of Metal Nanocrystal Memories Variations
Author :
Shaw, Jonathan T. ; Hou, Tuo-Hung ; Raza, Hassan ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
fYear :
2009
fDate :
27-29 May 2009
Firstpage :
1
Lastpage :
4
Abstract :
We have shown the process variation effects from nanocrystal size, density, registry and gate length in 20-90 nm metal nanocrystal memory technology by 3D finite-element analysis. Conventional ID analysis in the gate stack will result in severe miscalculation of bit-error-rate due to neglecting the fringing fields and percolation path in the memory cell. We also present the statistical metrology on memory windows from nanocrystal placement control and the use of nanowire devices. We conclude that the self-assembled nanocrystals in the gate stack can fit the parametric yield required for 20 nm technology.
Keywords :
finite element analysis; flash memories; nanoelectronics; nanostructured materials; 3D finite-element analysis; bit-error-rate; gate stack; metal nanocrystal memory technology; nanocrystal placement control; nanowire device; size 20 nm to 90 nm; statistical metrology; Bit error rate; Electrostatics; Finite element methods; Flash memory; Fluctuations; Hafnium oxide; Metrology; Nanocrystals; Nanoscale devices; Nonvolatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
Type :
conf
DOI :
10.1109/IWCE.2009.5091077
Filename :
5091077
Link To Document :
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