30 GHz fully packaged modified uni-traveling carrier photodiodes for high-power applications

High-speed photodetectors with large saturation photocurrent are key components in fiber optic links and photonic microwave applications. Recently, we demonstrated flip-chip bonded modified uni-traveling carrier photodiodes (MUTC PDs) that achieved high saturation current and high speed [1]. In the present work, MUTC PDs are fully packaged and characterized under high-power large-signal modulation conditions. The devices achieve 13 dBm RF output power at 30 GHz, an output third-order intercept point (IP3) up to 36 dBm, low amplitude-to-phase (AM-to-PM) conversion coefficient, and are suitable to detect 42 Gbit/s data streams with peak-to-peak voltage Vp-p as high as 2.4 V.