Title :
A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models
Author :
Cheng, Yingda ; Gamba, Irene M. ; Majorana, Armando ; Shu, Chi-Wang
Author_Institution :
Dept. of Math. & ICES, Univ. of Texas at Austin, Austin, TX
Abstract :
We present new preliminary results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. Very recently in, results for one and two dimensional devices were obtained in the case of silicon semiconductor assuming the non-parabolic band approximation. Here, more general band structures are considered. Preliminary benchmark numerical tests on Kane and Brunetti et al. band models are reported.
Keywords :
Boltzmann equation; Galerkin method; Poisson equation; elemental semiconductors; semiconductor devices; silicon; deterministic computations; discontinuous Galerkin solver; electron transport; full-band Boltzmann-Poisson models; nonparabolic band approximation; semiconductor devices; silicon semiconductor; Acoustic scattering; Computational modeling; Electrons; Ice; Lattices; Mathematical model; Mathematics; Neodymium; Optical scattering; Probability density function;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091079
