A Global EMC-FDTD Simulation Tool for High-Frequency Carrier Transport in Semiconductors

Author

Willis, K.J. ; Hagness, S.C. ; Knezevic, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

We present a computational tool for the characterization of conductive media at THz frequencies. By coupling the Ensemble Monte Carlo (EMC) simulator of carrier dynamics and the finite-difference time-domain (FDTD) solver of Maxwell´s equations, we develop and characterize a robust and versatile global simulator that interactively tracks field-particle dynamics. In this report the EMC-FDTD simulator is used to model the interaction of bulk doped silicon with THz frequency electromagnetic plane waves. The performance of the simulation tool is investigated in terms of several simulation parameters, including grid cell size and carrier ensemble size. The complex conductivity of doped silicon at THz frequencies obtained from the combined EMC-FDTD solver is in good agreement with available experimental results.

Keywords

Maxwell equations; Monte Carlo methods; electrical conductivity; elemental semiconductors; finite difference time-domain analysis; high-frequency effects; silicon; terahertz wave spectra; Maxwell´s equations; Si:Jk; bulk doped silicon; carrier dynamics; complex conductivity; computational tool; conductive media; ensemble Monte Carlo simulator; field-particle dynamics; finite-difference time-domain solver; global EMC-FDTD simulation; grid cell size; high-frequency carrier transport; semiconductors; terahertz frequency electromagnetic plane waves; Computational modeling; Electromagnetic compatibility; Electromagnetic modeling; Finite difference methods; Frequency; Maxwell equations; Monte Carlo methods; Robustness; Silicon; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091080

Filename

5091080