Title :
A Study of Temperature-dependent Properties of N-type d-doped Si Band-structures in Equilibrium
Author :
Ryu, Hoon ; Lee, Sunhee ; Klimeck, Gerhard
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN
Abstract :
A highly phosphorus delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-dependent electronic properties are studied. To account for high doping density with many electrons, a highly parallelized self-consistent Schrodinger-Poisson solver is used with atomistic representations of multiple impurity ions. The band-structure in equilibrium and the corresponding Fermi-level position are computed for a selective set of temperatures. The result at room temperature is compared with previous studies and the temperature-dependent electronic properties are discussed further in detail with the calculated 3-D self-consistent potential profile.
Keywords :
Fermi level; Poisson equation; SCF calculations; Schrodinger equation; band structure; elemental semiconductors; phosphorus; semiconductor quantum wells; silicon; tight-binding calculations; 3D self-consistent potential profile; Fermi level; Si:P; band structure; doping density; multiple impurity ions; periodic boundary conditions; quantum well; self-consistent Schrodinger-Poisson solver; semiempirical tight-binding band model; temperature-dependent electronic properties; Capacitive sensors; Computer networks; Doping; Electrons; Impurities; Intelligent networks; Nanotechnology; Quantum computing; Semiconductor process modeling; Temperature;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091082
