DocumentCode
2183064
Title
Correlation Effects in Silicon Nanowire MOSFETs
Author
Li, Changsheng ; Bescond, Marc ; Lannoo, Michel
Author_Institution
IM2NP, Bat. IRPHE, Marseille
fYear
2009
fDate
27-29 May 2009
Firstpage
1
Lastpage
4
Abstract
We report a numerical study of the self-energy correction due to correlation effects from dynamic screening of the moving electron in silicon nanowire transistors. This many-body effect, which is not included in the usual Hartree approximation, is then incorporated self-consistently into a non-equilibrium Green´s function (NEGF) code. The results pinpoint the importance of dielectric confinement whose magnitude can not be neglected compared to its quantum counterpart in ultimate nanowire transistors.
Keywords
Green´s function methods; MOSFET; elemental semiconductors; nanoelectronics; nanowires; silicon; Hartree approximation; NEGF code; correlation effects; dynamic screening; nanowire transistors; nonequilibrium Green function code; silicon nanowire MOSFET; Charge carrier processes; Dielectric thin films; Electrons; Electrostatics; Green´s function methods; H infinity control; MOSFETs; Nanoscale devices; Plasmons; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Electronic_ISBN
978-1-4244-3927-0
Type
conf
DOI
10.1109/IWCE.2009.5091100
Filename
5091100
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