Title :
Correlation Effects in Silicon Nanowire MOSFETs
Author :
Li, Changsheng ; Bescond, Marc ; Lannoo, Michel
Author_Institution :
IM2NP, Bat. IRPHE, Marseille
Abstract :
We report a numerical study of the self-energy correction due to correlation effects from dynamic screening of the moving electron in silicon nanowire transistors. This many-body effect, which is not included in the usual Hartree approximation, is then incorporated self-consistently into a non-equilibrium Green´s function (NEGF) code. The results pinpoint the importance of dielectric confinement whose magnitude can not be neglected compared to its quantum counterpart in ultimate nanowire transistors.
Keywords :
Green´s function methods; MOSFET; elemental semiconductors; nanoelectronics; nanowires; silicon; Hartree approximation; NEGF code; correlation effects; dynamic screening; nanowire transistors; nonequilibrium Green function code; silicon nanowire MOSFET; Charge carrier processes; Dielectric thin films; Electrons; Electrostatics; Green´s function methods; H infinity control; MOSFETs; Nanoscale devices; Plasmons; Silicon;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091100
