Title :
An original passive device for on-wafer noise parameter measurement verification
Author :
Boudiaf, A. ; Dubon-Chevallier, C. ; Pasquet, D.
Author_Institution :
EMO-ENSEA, Cergy Pontoise, France
fDate :
June 27 1994-July 1 1994
Abstract :
Using a thin film technology, we have designed and fabricated a new passive device for on-wafer noise parameter measurement verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low noise MESFET or HEMT transistors. This new device is ideal as a verification standard, and suited for on-wafer measurements due to its small size and wide operation bandwidth.<>
Keywords :
MMIC; Schottky gate field effect transistors; calibration; electric noise measurement; field effect integrated circuits; high electron mobility transistors; integrated circuit testing; measurement standards; microwave measurement; microwave reflectometry; multiport networks; passive networks; semiconductor device noise; semiconductor device testing; thin film devices; HEMT transistors; input-output reflection coefficients; low noise MESFET; microstrip image coupler; on-wafer noise parameter measurement verification; passive device; thin film technology; verification standard; wide operation bandwidth; Circuit noise; Electrical resistance measurement; FETs; Frequency measurement; Measurement standards; Noise figure; Noise measurement; Scattering parameters; Size measurement; Testing;
Conference_Titel :
Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-7803-1984-2
DOI :
10.1109/CPEM.1994.333237
