An original passive device for on-wafer noise parameter measurement verification

Author

Boudiaf, A. ; Dubon-Chevallier, C. ; Pasquet, D.

Author_Institution

EMO-ENSEA, Cergy Pontoise, France

fYear

1994

fDate

June 27 1994-July 1 1994

Firstpage

250

Lastpage

251

Abstract

Using a thin film technology, we have designed and fabricated a new passive device for on-wafer noise parameter measurement verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low noise MESFET or HEMT transistors. This new device is ideal as a verification standard, and suited for on-wafer measurements due to its small size and wide operation bandwidth.<>

Keywords

MMIC; Schottky gate field effect transistors; calibration; electric noise measurement; field effect integrated circuits; high electron mobility transistors; integrated circuit testing; measurement standards; microwave measurement; microwave reflectometry; multiport networks; passive networks; semiconductor device noise; semiconductor device testing; thin film devices; HEMT transistors; input-output reflection coefficients; low noise MESFET; microstrip image coupler; on-wafer noise parameter measurement verification; passive device; thin film technology; verification standard; wide operation bandwidth; Circuit noise; Electrical resistance measurement; FETs; Frequency measurement; Measurement standards; Noise figure; Noise measurement; Scattering parameters; Size measurement; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on

Conference_Location

Boulder, CO, USA

Print_ISBN

0-7803-1984-2

Type

conf

DOI

10.1109/CPEM.1994.333237

Filename

333237