• DocumentCode
    2183470
  • Title

    First-Principles Study of the Potential Step in Metal/Graphene Contact

  • Author

    Ran, Qiushi ; Gao, Mingzhi ; Wang, Yan ; Yu, Zhiping

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing
  • fYear
    2009
  • fDate
    27-29 May 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Metal-graphene contacts play a critical role in graphene-based electronics. The potential steps of graphene contact with eight different kinds of metals and many other electronic properties were obtained using first-principles DFT calculation. Core potential of some C atoms are used as reference to get the change of Fermi level between isolated and contacted graphene no matter whether the Dirac point could be seen in the bandstructure or not. Our results show that there are two kinds of contacts except Pd. The strong chemical contact is preferred when comes to transport.
  • Keywords
    Fermi level; graphene; nanoelectronics; semiconductor-metal boundaries; C; Dirac point; Fermi level; chemical contact; core potential; electronic properties; first-principles DFT calculation; graphene-based electronics; metal/graphene contact; Chemicals; Conducting materials; Degradation; Fabrication; Microelectronics; Nanostructured materials; Radio access networks; Resists; Semiconductor materials; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2009. IWCE '09. 13th International Workshop on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-3925-6
  • Electronic_ISBN
    978-1-4244-3927-0
  • Type

    conf

  • DOI
    10.1109/IWCE.2009.5091114
  • Filename
    5091114