DocumentCode
2183470
Title
First-Principles Study of the Potential Step in Metal/Graphene Contact
Author
Ran, Qiushi ; Gao, Mingzhi ; Wang, Yan ; Yu, Zhiping
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing
fYear
2009
fDate
27-29 May 2009
Firstpage
1
Lastpage
4
Abstract
Metal-graphene contacts play a critical role in graphene-based electronics. The potential steps of graphene contact with eight different kinds of metals and many other electronic properties were obtained using first-principles DFT calculation. Core potential of some C atoms are used as reference to get the change of Fermi level between isolated and contacted graphene no matter whether the Dirac point could be seen in the bandstructure or not. Our results show that there are two kinds of contacts except Pd. The strong chemical contact is preferred when comes to transport.
Keywords
Fermi level; graphene; nanoelectronics; semiconductor-metal boundaries; C; Dirac point; Fermi level; chemical contact; core potential; electronic properties; first-principles DFT calculation; graphene-based electronics; metal/graphene contact; Chemicals; Conducting materials; Degradation; Fabrication; Microelectronics; Nanostructured materials; Radio access networks; Resists; Semiconductor materials; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Electronic_ISBN
978-1-4244-3927-0
Type
conf
DOI
10.1109/IWCE.2009.5091114
Filename
5091114
Link To Document