Title :
First-Principles Study of the Potential Step in Metal/Graphene Contact
Author :
Ran, Qiushi ; Gao, Mingzhi ; Wang, Yan ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
Metal-graphene contacts play a critical role in graphene-based electronics. The potential steps of graphene contact with eight different kinds of metals and many other electronic properties were obtained using first-principles DFT calculation. Core potential of some C atoms are used as reference to get the change of Fermi level between isolated and contacted graphene no matter whether the Dirac point could be seen in the bandstructure or not. Our results show that there are two kinds of contacts except Pd. The strong chemical contact is preferred when comes to transport.
Keywords :
Fermi level; graphene; nanoelectronics; semiconductor-metal boundaries; C; Dirac point; Fermi level; chemical contact; core potential; electronic properties; first-principles DFT calculation; graphene-based electronics; metal/graphene contact; Chemicals; Conducting materials; Degradation; Fabrication; Microelectronics; Nanostructured materials; Radio access networks; Resists; Semiconductor materials; Temperature;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091114