Title :
Full-3D Real-Space Simulation of Surface-Roughness Effects in Double-Gate MOSFETs
Author :
Buran, Claudio ; Pala, Marco G. ; Mouis, Mireille ; Poli, Stefano
Author_Institution :
IMEP-LAHC, Grenoble INP, Grenoble
Abstract :
We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrodinger algorithm within the real-space non equilibrium Green´s function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt periodic boundary conditions along one of the transverse directions. Transfer characteristics are computed for different realistic values of the root mean square (RMS) of spatial fluctuations whereas SR-limited mobility, which is extracted from effective mobility after subtraction of the ballistic component, presents a non monotonic dependence on the inversion charge density.
Keywords :
Green´s function methods; MOSFET; Poisson equation; Schrodinger equation; mean square error methods; surface roughness; Poisson-Schrodinger algorithm; SR-limited mobility; autocorrelation law; double-gate MOSFET; full-3D real-space simulation; geometrical description; inversion charge density; realspace nonequilibrium Green´s function; root mean square; rough planar structure; surface-roughness effect; transfer characteristics; Autocorrelation; Boundary conditions; Computational modeling; Green´s function methods; MOSFETs; Numerical simulation; Periodic structures; Rough surfaces; Strontium; Surface roughness;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091115
