DocumentCode
21836
Title
Advances on the Stress Interaction Model
Author
Lewitschnig, Horst
Author_Institution
Infineon Technol. Austria AG, Villach, Austria
Volume
64
Issue
1
fYear
2015
fDate
Mar-15
Firstpage
528
Lastpage
534
Abstract
In a reliability experiment, a combination of temperature cycling (TC) and temperature humidity bias (THB) stress was applied. The outcome varied significantly with the sequence of the stress tests. It made a difference whether first TC-stress was performed and then THB-stress, or the other way round. A statistical model is created for this effect. It is called the Stress Interaction Model. The stress sequence is given as a path in BBR2. The hazard function is set up as a vector field. Unless the hazard function is a potential of a vector field, the path integral depends on the way from point A to point B. In this setup, the sequence of the applied stress tests, say the stress history, is reflected in the reliability function. In this paper, the Stress Interaction Model is extended by a shape factor.
Keywords
semiconductor device reliability; semiconductor device testing; statistical analysis; stress effects; thermal management (packaging); THB stress; hazard function; reliability experiment; reliability function; statistical model; stress interaction model; stress sequence; temperature cycling stress; temperature humidity bias stress; Hazards; Humidity; Reliability theory; Shape; Stress; Vectors; Random variables; reliability theory; semiconductor device reliability; statistical distributions; stochastic processes;
fLanguage
English
Journal_Title
Reliability, IEEE Transactions on
Publisher
ieee
ISSN
0018-9529
Type
jour
DOI
10.1109/TR.2014.2363151
Filename
6942218
Link To Document