• DocumentCode
    21836
  • Title

    Advances on the Stress Interaction Model

  • Author

    Lewitschnig, Horst

  • Author_Institution
    Infineon Technol. Austria AG, Villach, Austria
  • Volume
    64
  • Issue
    1
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    528
  • Lastpage
    534
  • Abstract
    In a reliability experiment, a combination of temperature cycling (TC) and temperature humidity bias (THB) stress was applied. The outcome varied significantly with the sequence of the stress tests. It made a difference whether first TC-stress was performed and then THB-stress, or the other way round. A statistical model is created for this effect. It is called the Stress Interaction Model. The stress sequence is given as a path in BBR2. The hazard function is set up as a vector field. Unless the hazard function is a potential of a vector field, the path integral depends on the way from point A to point B. In this setup, the sequence of the applied stress tests, say the stress history, is reflected in the reliability function. In this paper, the Stress Interaction Model is extended by a shape factor.
  • Keywords
    semiconductor device reliability; semiconductor device testing; statistical analysis; stress effects; thermal management (packaging); THB stress; hazard function; reliability experiment; reliability function; statistical model; stress interaction model; stress sequence; temperature cycling stress; temperature humidity bias stress; Hazards; Humidity; Reliability theory; Shape; Stress; Vectors; Random variables; reliability theory; semiconductor device reliability; statistical distributions; stochastic processes;
  • fLanguage
    English
  • Journal_Title
    Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9529
  • Type

    jour

  • DOI
    10.1109/TR.2014.2363151
  • Filename
    6942218