DocumentCode :
2183733
Title :
Precise indirect measurements of quantized Hall resistance ratio R/sub H/(i=1)/R/sub H/(i=2) in GaAs-based sample
Author :
Piquemal, F. ; Chih Ping Liang ; Geneves, G. ; Jensen, H.D.
Author_Institution :
Lab. Primaire d´Electr.-Magnetisme, BNM/LCIE, Fontenay-aux-Roses, France
fYear :
1994
fDate :
June 27 1994-July 1 1994
Firstpage :
198
Lastpage :
199
Abstract :
Indirect measurements of the quantized Hall resistance /spl rho//sub xy/=R/sub H/(i) are carried out on the i=1 and i=2 plateaus for an AlGaAs/GaAs heterostructure cooled at 1.2 K under both directions of magnetic field. The mean value of the ratio R/sub H/(i=1)/R/sub H/(i=2) differs from the value 2 by +0.3 part in 10/sup 9/ with a combined relative uncertainty (1 /spl sigma/) lower than 3 parts in 10/sup 9/.<>
Keywords :
III-V semiconductors; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; AlGaAs-GaAs; AlGaAs/GaAs heterostructure; combined relative uncertainty; indirect measurement; quantized Hall resistance ratio; Bridge circuits; Conductivity; Design for manufacture; Electrical resistance measurement; Gallium arsenide; Hall effect; Measurement standards; Metrology; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-7803-1984-2
Type :
conf
DOI :
10.1109/CPEM.1994.333262
Filename :
333262
Link To Document :
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