Title :
Monte-Carlo Modeling of Photoelectron Kinetics in Quantum-Dot Photodetectors
Author :
Mitin, Vladimir ; Sergeev, Andrei ; Chien, Li-Hsin ; Vagidov, Nizami
Author_Institution :
Electr. Eng., SUNY - Univ. at Buffalo, Buffalo, NY
Abstract :
Using Monte-Carlo method, we simulate kinetics and transport of electrons in different types of InAs/GaAs quantum-dot infrared photodetectors. Our simulation program exploits Gamma-L-X model of the conduction band of semiconductor and it includes three major types of electron scattering on: 1) acoustic phonons, 2) polar optical phonons, and 3) intervalley phonons. The results of simulation demonstrate that the combination of local potential barriers around quantum dots and quantum-dot structure with collective barriers can be used to achieve long carrier lifetimes, and therefore high photoconductive gain, responsivity, and detectivity.
Keywords :
III-V semiconductors; Monte Carlo methods; carrier lifetime; conduction bands; electron-phonon interactions; gallium arsenide; indium compounds; infrared detectors; photoconductivity; photodetectors; semiconductor device models; semiconductor quantum dots; InAs-GaAs; Monte-Carlo modeling; acoustic phonons; carrier lifetimes; collective barriers; conduction band; detectivity; electron scattering; electron transport; intervalley phonons; local potential barriers; photoconductive gain; photoelectron kinetics; polar optical phonons; quantum-dot infrared photodetectors; quantum-dot structure; responsivity; Acoustic scattering; Charge carrier lifetime; Electron optics; Gallium arsenide; Kinetic theory; Optical scattering; Particle scattering; Phonons; Photodetectors; Quantum dots;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091123