DocumentCode :
2183814
Title :
Multi Subband Deterministic Simulation of an Ultra-thin Double Gate MOSFET with 2D Electron Gas
Author :
Tiao Lu ; Gang Du ; Haiyan Jiang ; Xiaoyan Liu ; Pingwen Zhang
Author_Institution :
Sch. of Math. Sci., Peking Univ., Beijing
fYear :
2009
fDate :
27-29 May 2009
Firstpage :
1
Lastpage :
4
Abstract :
We present a self-consistent multi subband deterministic solver of the Boltzmann transport equation of the two dimensional (2D) electron gas. The Schodinger equation at each slice in the confinement direction and the two dimensional Poisson equation are self-consistently solved with the Boltzmann transport equation. The energy quantization and the scattering of the 2D electron gas are included. We apply this solver to an ultra-thin body double gate MOSFET and show the influence of the 2Dk scattering to the electron transport.
Keywords :
Boltzmann equation; MOSFET; Poisson equation; Schrodinger equation; electron gas; 2D electron gas; Boltzmann transport equation; Schodinger equation; confinement direction; electron transport; multisubband deterministic simulation; two dimensional Poisson equation; ultra-thin double gate MOSFET; Boltzmann equation; Distribution functions; Effective mass; Electrons; MOSFET circuits; Mathematics; Microelectronics; Particle scattering; Poisson equations; Quantization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
Type :
conf
DOI :
10.1109/IWCE.2009.5091125
Filename :
5091125
Link To Document :
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