DocumentCode :
2183897
Title :
Nonparabolicity Effects in Quantum Cascade Lasers
Author :
Milovanovic, G. ; Kosina, H.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna
fYear :
2009
fDate :
27-29 May 2009
Firstpage :
1
Lastpage :
4
Abstract :
We calculate electron-LO phonon and interface roughness scattering rates in a GaAs/AlxGa1-xAs quantum cascade laser taking into account conduction subband nonparabolicity. In this work we investigate the Al concentration and the k|| dependence of nonparabolicity effects. It is shown that the subband nonparabolicity may increase the electron-LO phonon scattering rates significantly, but the scattering rates are not qualitatively different from those in the parabolic approximation. Especially, we show that nonparabolicity leads to noticeable changes even for transitions involving electrons at the bottom of the subband and that this behaviour follows from the phonon wave vector and the electron phonon overlap.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; electron-phonon interactions; gallium arsenide; quantum cascade lasers; GaAs-AlxGa1-xAs; conduction subband nonparabolicity effects; electron-LO phonon scattering rates; interface roughness scattering rates; parabolic approximation; phonon wave vector; quantum cascade lasers; Effective mass; Electrons; Equations; Gallium arsenide; Microelectronics; Optical scattering; Particle scattering; Phonons; Quantum cascade lasers; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
Type :
conf
DOI :
10.1109/IWCE.2009.5091129
Filename :
5091129
Link To Document :
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