Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices

Author

Baumgartner, Oskar ; Karner, Markus ; Sverdlov, Viktor ; Kosina, Hans

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

In this work, the kldrp method is used to calculate the electronic subband structure. To reduce the computational cost of the carrier concentration calculation and henceforth the required number of numerical solutions of the Schrodinger equation, an efficient 2D k-space integration by means of the Clenshaw-Curtis method is proposed. The suitability of our approach is demonstrated by simulation results of Si UTB double gate nMOS and pMOS devices.

Keywords

CMOS integrated circuits; MOSFET; Schrodinger equation; band structure; carrier density; dispersion relations; elemental semiconductors; internal stresses; semiconductor device models; silicon; 2D k-space integration; Clenshaw-Curtis method; Schrodinger equation; Si; carrier concentration calculation; electron states; electronic subband structure calculation; hole states; nMOS device; nonparabolic dispersion relation; pMOS device; shear strain effects; strained silicon UTB devices; Distribution functions; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091131

Filename

5091131