Title :
Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices
Author :
Baumgartner, Oskar ; Karner, Markus ; Sverdlov, Viktor ; Kosina, Hans
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna
Abstract :
In this work, the kldrp method is used to calculate the electronic subband structure. To reduce the computational cost of the carrier concentration calculation and henceforth the required number of numerical solutions of the Schrodinger equation, an efficient 2D k-space integration by means of the Clenshaw-Curtis method is proposed. The suitability of our approach is demonstrated by simulation results of Si UTB double gate nMOS and pMOS devices.
Keywords :
CMOS integrated circuits; MOSFET; Schrodinger equation; band structure; carrier density; dispersion relations; elemental semiconductors; internal stresses; semiconductor device models; silicon; 2D k-space integration; Clenshaw-Curtis method; Schrodinger equation; Si; carrier concentration calculation; electron states; electronic subband structure calculation; hole states; nMOS device; nonparabolic dispersion relation; pMOS device; shear strain effects; strained silicon UTB devices; Distribution functions; Silicon;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091131
