DocumentCode :
2183974
Title :
Effect of LaNiO3 electrode on crystallization of BaTiO3 thin films for capacitors prepared by solgel technique
Author :
Li, Bin ; Wang, Chunqing ; Wu, Weiwei ; Zhang, Wei ; Zhong, Ying
fYear :
2011
fDate :
8-11 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
The conductive LaNiO3 (LNO) and ferroelectric BaTiO3 (BTO) thin films had been prepared by sol-gel method. The preparation process of LNO films had been optimized by studying on the effects of annealing temperature and film thickness on their properties and structures. The optimal annealing temperature of LNO films was 700°C. With the increment of film thickness, the surface resistivity of LNO films reduced. It was found that the LNO films, could induce the crystal orientations of BTO thin films, would greatly expand the application of ferroelectric films in the field of capacitors.
Keywords :
annealing; barium compounds; crystallisation; electrodes; ferroelectric thin films; lanthanum compounds; nickel compounds; sol-gel processing; thin film capacitors; titanium compounds; BaTiO3; LaNiO3; LaNiO3 electrode effect; annealing temperature; capacitors; ferroelectric thin films; film thickness; sol-gel technique; temperature 700 degC; thin film crystallization; Annealing; Conductivity; Electrodes; Films; Silicon; Substrates; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
Type :
conf
DOI :
10.1109/ICEPT.2011.6066852
Filename :
6066852
Link To Document :
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