• DocumentCode
    2183979
  • Title

    Employment of sputtered Ni-Zn films for under bump metallization with Sn-3.0Ag-0.5Cu solder attached during liquid reactions

  • Author

    Lin, Hsiu-Min ; Duh, Jenq-Gong ; Tsai, Su-Yueh

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This study aims to investigate the feasibility of sputtered Ni-xZn films for application as the under bump metallization (UBM). The interfacial reaction under liquid reactions of Sn-3.0Ag-0.5Cu (SAC305) joints with Ni-Zn films will be evaluated. Various kinds of Ni-Zn films were fabricated by sputtering. The surface roughness and residual stress of the Ni-Zn film was evaluated using atomic force microscope (AFM) and the curvature technique. The X-ray diffractometry (XRD) was used to further identify the structure and phases in the films. Detailed morphology of the interfacial reaction in SAC305/Ni-xZn joints was performed by a field-emission scanning electron microscope (FE-SEM) with low angle backscattered electrons detector (LABE). Different structure growth in sputtered deposition might lead to distinct IMC formation. The microstructure evolution and phase formation in the SAC305/Ni-7Zn and SAC305/Ni-20Zn joints varied with reflow time. This study demonstrated that the binary Ni-Zn film might be a potential alternative for under-bump metallization application. In addition, the influence of Zn on Ni-Zn films UBM during liquid reactions was discussed and probed.
  • Keywords
    copper alloys; metallisation; nickel alloys; semiconductor thin films; silver alloys; solders; sputter deposition; zinc alloys; NiZn; Sn3.0Ag0.5Cu; X-ray diffractometry; atomic force microscope; interfacial reaction; liquid reactions; low angle backscattered electrons detector; residual stress; solder; sputtered films; surface roughness; under bump metallization; Copper; Films; Joints; Nickel; Residual stresses; Zinc; Sputtering; interfacial reaction; quantitative analysis; residual stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6066853
  • Filename
    6066853