Trimming lithography part II: An effect of trimming distance to the sub-resolution pattern quality

Author

Sriklat, Arreerat ; Atthi, Nithi ; Jeamsaksiri, Wutthinan ; Hruanun, Charndet ; Poyai, Arnporn ; Silapunt, Rardchawadee

Author_Institution

Dept. of Electron. & Telecommun. Eng., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok, Thailand

fYear

2011

fDate

17-19 May 2011

Firstpage

46

Lastpage

49

Abstract

Trimming lithography acts as one of the candidates for next generation lithography. The pattern size can be scaled by adjusting the trim distance that is much bigger than an original design linewidth. The photoresist feature size can be scaled down to 0.18 μm with the 0.9 μm mask and the 0.5 μm resolution exposure tool. However, a pattern density of the line/space pattern is lower than that of other patterning techniques. Different pattern qualities between dense and isolated patterns are explained by a diffraction of the waveform transmitted through the mask slit.

Keywords

lithography; photoresists; line/space pattern; next generation lithography; pattern density; patterning techniques; photoresist; resolution exposure tool; size 0.18 mum; size 0.5 mum; size 0.9 mum; sub-resolution pattern quality; trimming distance; trimming lithography; Moore´s law; Next generation lithography; Pattern shrinkage; Sub-resolution patterning; Trimming lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2011 8th International Conference on

Conference_Location

Khon Kaen

Print_ISBN

978-1-4577-0425-3

Type

conf

DOI

10.1109/ECTICON.2011.5947767

Filename

5947767