Effect of MgO thickness on temperature distribution in nanopillar structure

Author

Kaengrang, S. ; Siritaratiwat, A. ; Swadiponphollop, S. ; Thanananta, P. ; Ponukkha, J. ; Leeprakabboon, M. ; Praseartcharoensuk, V. ; Boonpanyarak, S. ; Kaewrawang, A.

Author_Institution

Dept. of Electr. Eng., Khon Kaen Univ., Khon Kaen, Thailand

fYear

2011

fDate

17-19 May 2011

Firstpage

62

Lastpage

65

Abstract

Thickness of MgO which is an important parameter for applications in spin-transfer torque magnetic random access memory has effect to the temperature increase of a nanopillar. We investigated the temperature increment of a nanopillar due to the current injection for the current-induced magnetization switching. The thickness dependence of the nanopillar and temperature were obtained using a finite integral technique with the commercial simulation. The nanopillar temperature was found to be proportional to the thickness of MgO and the temperatures of free layer were similar to pinned layer when decrease thickness of MgO.

Keywords

MRAM devices; magnesium compounds; magnetisation reversal; nanostructured materials; temperature distribution; MgO; current induced magnetization switching; current injection; finite integral technique; nanopillar structure; spin transfer torque magnetic random access memory; temperature distribution; thickness dependence; Copper; Heating; Materials; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2011 8th International Conference on

Conference_Location

Khon Kaen

Print_ISBN

978-1-4577-0425-3

Type

conf

DOI

10.1109/ECTICON.2011.5947771

Filename

5947771