Title :
Effect of MgO thickness on temperature distribution in nanopillar structure
Author :
Kaengrang, S. ; Siritaratiwat, A. ; Swadiponphollop, S. ; Thanananta, P. ; Ponukkha, J. ; Leeprakabboon, M. ; Praseartcharoensuk, V. ; Boonpanyarak, S. ; Kaewrawang, A.
Author_Institution :
Dept. of Electr. Eng., Khon Kaen Univ., Khon Kaen, Thailand
Abstract :
Thickness of MgO which is an important parameter for applications in spin-transfer torque magnetic random access memory has effect to the temperature increase of a nanopillar. We investigated the temperature increment of a nanopillar due to the current injection for the current-induced magnetization switching. The thickness dependence of the nanopillar and temperature were obtained using a finite integral technique with the commercial simulation. The nanopillar temperature was found to be proportional to the thickness of MgO and the temperatures of free layer were similar to pinned layer when decrease thickness of MgO.
Keywords :
MRAM devices; magnesium compounds; magnetisation reversal; nanostructured materials; temperature distribution; MgO; current induced magnetization switching; current injection; finite integral technique; nanopillar structure; spin transfer torque magnetic random access memory; temperature distribution; thickness dependence; Copper; Heating; Materials; Switches;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2011 8th International Conference on
Conference_Location :
Khon Kaen
Print_ISBN :
978-1-4577-0425-3
DOI :
10.1109/ECTICON.2011.5947771
