Activation energy analysis of X-ray irradiation on P-N diode

This paper investigate characteristics of P-N diode before and after irradiated by X-ray at energy ranking about 40, 55 and 70 keV, exposure time 205 second. After irradiated leakage current at 40, 55 and 70 keV were decreased. Therefore, we explain the effect of the X-ray irradiated on diode because it can improve performance of diode. The 4 mm² P-N junctions were fabricated by boron implantation process into phosphorus doped silicon wafer. The results show that the leakage current changes after exposed to the X-ray which indicated that the types of defect have been changed. The changes of these activation energies can be higher or lower than the result before X-ray exposure, which depends on type of defects. However, the results in this paper presented that the defects that caused by X-ray irradiation are manageable.