DocumentCode
2184224
Title
A highly linear CMOS temperature sensor
Author
Lin, Chun Wei ; Lin, Sheng Feng
Author_Institution
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
fYear
2011
fDate
17-19 May 2011
Firstpage
74
Lastpage
77
Abstract
In this work, we proposed a linear CMOS temperature-to-current converter as a temperature sensor, which especially benefit on enhancing the accuracy of thermal monitoring. The proposed design achieves highly linear relationship between temperature and current by annulling the most critical nonlinear square terms of it. Through utilizing a compensation scheme among two current sources driven in saturation region with different bias voltages, the nonlinear effect originated from the temperature dependence of both mobility degradation and threshold voltage drift is cancelled. The experiment results demonstrate competitive performance. The maximum temperature error and average power consumption of temperature sensor are merely ±0.022°C and 137.6μW respectively while the die area is about 27.1μm*18.3μm under the implementation of TSMC 0.35μm CMOS process with 3.3V power supply.
Keywords
CMOS integrated circuits; carrier mobility; temperature sensors; CMOS temperature-to-current converter; current source; highly linear CMOS temperature sensor; mobility degradation; nonlinear effect; power 137.6 muW; saturation region; thermal monitoring; voltage 3.3 V; Equations; Fabrication; Monitoring; Temperature measurement; Temperature sensors; Thermal analysis; Thermal degradation; mobility degradation; temperature sensor; temperature-to-current converter; thermal monitoring; threshold voltage drift;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2011 8th International Conference on
Conference_Location
Khon Kaen
Print_ISBN
978-1-4577-0425-3
Type
conf
DOI
10.1109/ECTICON.2011.5947774
Filename
5947774
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