DocumentCode
2184323
Title
A low-voltage low-power CMOS weak inversion true rms-to-dc converter
Author
Kompitaya, Pantre ; Kaewdang, Khanittha
Author_Institution
Dept. of Electr. & Electron. Eng., Ubon Ratchathani Univ., Ubon Ratchathani, Thailand
fYear
2011
fDate
17-19 May 2011
Firstpage
94
Lastpage
97
Abstract
A true RMS-to-DC converter based on the explicit computation technique is proposed in this paper. The design technique utilizes translinear principle circuit to realize current mode absolute-value, squarer, averaging and square root circuit. The circuit employs CMOS transistors operating in weak inversion region, and features very low power (<;1 uW), low supply voltage (0.8 V) and wide input dynamic range (0.5 nA to 500 nA) with the error less than 2%. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.
Keywords
CMOS integrated circuits; MOSFET; convertors; CMOS transistors; HSPICE simulation; RMS-to-DC converter; current 0.5 nA to 500 nA; low-voltage low-power CMOS weak inversion; translinear principle circuit; voltage 0.8 V;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2011 8th International Conference on
Conference_Location
Khon Kaen
Print_ISBN
978-1-4577-0425-3
Type
conf
DOI
10.1109/ECTICON.2011.5947779
Filename
5947779
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