Title :
Semiconductor Technology-Trends, Challenges and Opportunities
Author_Institution :
Semicond. Res. & Dev. Center, IBM Syst. & Technol. Group, Hopewell Junction, NY
Abstract :
Traditional CMOS scaling, which was driving device performance during the past several decades, is approaching atomistic and quantum-mechanical boundaries. Semiconductor R&D innovation have never been more critical to drive technology scaling and performance. The development of leading-edge silicon technology requires long-term investments and collaboration in fundamental research to solve the significant challenges of the future technology nodes at an affordable cost. Computational techniques will be a critical tool in this effort. This talk will describe the semiconductor technology future directions, challenges and opportunities.
Keywords :
CMOS integrated circuits; innovation management; semiconductor technology; CMOS scaling; computational techniques; leading-edge silicon technology; semiconductor innovation; semiconductor technology; CMOS technology; Capacitance; Collaboration; Costs; Dielectric materials; High K dielectric materials; Integrated circuit interconnections; Investments; Silicon compounds; Technological innovation;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091147
