• DocumentCode
    2184386
  • Title

    Investigation of various pad structure influence for copper wire bondability

  • Author

    Chen, Qiang ; Zhao, Zhenqing ; Liu, Hai ; Chae, Jonghyun ; Kim, Senyun ; Chung, Myungkee

  • Author_Institution
    Samsung Semicond. China R&D Co. Ltd., Suzhou, China
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As an alternative bonding interconnect material to gold wire, copper wire technology is getting more attention in assembly processes for its excellent electrical and thermal performance. Copper wire bonding meets lots of challenges because of its free air ball hardness, such as Al extrusion, pad crack/damage, reliability and low yield issue. General speaking, there are two ways to improve the issue for copper wire bonding, one is wire properties improvement, such as softer and high reliability wire research; another one is copper friendly pad design and make bond pads suits to copper wire very well. In order to design the bond pad for copper, we should figure out which are important factors in pad to copper first. The purpose of this paper is to study the effects of various bond pad structures on copper wire bonding. In our study, not only the pad total thickness but also the pad structure was considered. As a result, pad total thickness, final Al thickness and VIA design play an important role in bonding. Theoretical analysis and theoretical prediction of a state-of-art pad structures for copper wire bonding application was presented.
  • Keywords
    aluminium; copper; electronics packaging; lead bonding; reliability; Al; Cu; bond pad structure; bonding interconnect material; copper wire bondability; free air ball hardness; pad crack; pad damage; pad total thickness; Bonding; Copper; Electronics packaging; Packaging; Reliability; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6066867
  • Filename
    6066867