Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS

In this work, simulations of mobility variation due to the combination of uniaxial stress and biaxial strain are presented. This study provides a better understanding of the mobility variation and predicts the mobility enhancement for higher stress levels. Transport in the non-equilibrium regime is also investigated. High-field channel drift velocity characteristics are evaluated and compared for different combinations of uniaxial stress and biaxial strain. A better overview of the transport enhancement due to stress/strain at different transport situations including near and non-equilibrium is provided.