Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM/atomistic Method

Author

Penazzi, G. ; Pecchia, A. ; Sacconi, F. ; der Maur, M. Auf ; Povolotskyi, M. ; Romano, G. ; Carlo, A. Di

Author_Institution

Univ. di Roma Tor Vergata, Rome

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

Calculations of optoelectronic properties of a GaN quantum dot embedded in an AlGaN nanocolumn are presented, using the TiberCAD simulator. The calculations emphasize the role of the growth direction in determining the quantum efficiency of such light emitting devices. Multiband kldrp is used, with corrections from drift diffusion and strain calculations. Results are discussed using an empirical tight binding method, with the same macroscopic corrections as for kldrp, implemented in TiberCAD framework itself.

Keywords

III-V semiconductors; aluminium compounds; diffusion; finite element analysis; gallium compounds; k.p calculations; light emitting devices; nanoelectronics; semiconductor device models; semiconductor quantum dots; tight-binding calculations; wide band gap semiconductors; GaN-AlGaN; TiberCAD simulator; drift diffusion; empirical tight binding method; light emitting devices; mixed FEM-atomistic method; multiband k.p theory; nanocolumn; optical properties; optoelectronic properties; quantum dot; strain calculations; Aluminum gallium nitride; Atom optics; Capacitive sensors; Function approximation; Gallium nitride; III-V semiconductor materials; Nanoscale devices; Piezoelectric polarization; Quantum dots; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091153

Filename

5091153