DocumentCode :
2184651
Title :
Signal integrity simulation for SiP using GTLE
Author :
Jia, Jia ; Cao, Liqiang ; Wan, Lixi
Author_Institution :
Inst. of Microelectron., Beijing, China
fYear :
2011
fDate :
8-11 Aug. 2011
Firstpage :
1
Lastpage :
3
Abstract :
Signal integrity (SI) simulation for system-in-package (SiP) is a bottleneck in SiP design flow. This paper presents a novel numerical algorithm for SI simulation in packaging structure. This algorithm is based on 2D Generalized Transmission Line Equation (GTLE), Finite Difference Time Domain (FDTD) and mesh division technique. SI is simulated using mesh division technique where the model of SI is obtained by regarding each cell as a 2D transmission line. 2D GTLE is a group partial equation about voltage and current density distribution on a power/ground plane pair. After reduction, the voltage equation for 2D GTLE is obtained, which is a wave equation. One method to solve the wave equation is by the finite-difference scheme. In this paper, the fringe effect and absorbing boundary condition is applied to implement the wave equation efficiently and easily. Three test cases are presented to explain the solution of the wave equation. The methodology described in prior section has been implemented in a CAD tools. The results from our method were compared to those from the full-wave simulator to show efficiently in signal integrity simulation.
Keywords :
finite difference time-domain analysis; system-in-package; 2D GTLE; 2D generalized transmission line equation; 2D transmission line; CAD tools; FDTD; SI simulation; SiP design flow; finite difference time domain; full-wave simulator; mesh division technique; power-ground plane pair; signal integrity simulation; system-in-package; wave equation; Equations; Finite difference methods; Integrated circuit modeling; Mathematical model; Numerical models; Solid modeling; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
Type :
conf
DOI :
10.1109/ICEPT.2011.6066878
Filename :
6066878
Link To Document :
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