Title :
Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport
Author :
Nguyen, Huu-Nha ; Querlioz, Damien ; Galdin-Retailleau, Sylvie ; Bournel, Arnaud ; Dollfus, Philippe
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud 11, Orsay
Abstract :
This paper examines the quantum transport effects in carbon nanotube field-effect transistors (CNTFETs) within the Wigner´s function formalism, using a particle Monte Carlo technique. The comparison with semi-classical simulation shows that significant differences observed at the microscopic level are not necessarily strongly reflected at the macroscopic level in terms of drain current. The dependence of quantum effects on gate length is also investigated.
Keywords :
Monte Carlo methods; Wigner distribution; carbon nanotubes; field effect transistors; tunnelling; C; Wigner Monte Carlo simulation; carbon nanotube field-effect transistors; drain current; gate length; quantum transport; semiclassical simulation; tunnelling effect; Boltzmann equation; CNTFETs; Carbon nanotubes; FETs; MOSFETs; Microscopy; Monte Carlo methods; Particle scattering; Poisson equations; Tunneling;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091161