Title :
Picosecond time domain measurements using GaAs FET sampler
Author :
Hafdallah, H. ; Ouslimani, A. ; Adde, R. ; Vernet, G.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
June 27 1994-July 1 1994
Abstract :
Sampling measurements in the low tens picosecond range are performed using a hybrid FET technology which incorporates the different functions i.e. sampler, sampling pulse generator, test step generator. The accuracy of measured waveforms is investigated using time domain simulations.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; signal processing equipment; time-domain analysis; GaAs; GaAs FET sampler; hybrid FET technology; picosecond time domain measurements; sampling measurements; sampling pulse generator; test step generator; time domain simulations; waveforms; Circuit testing; FETs; Gallium arsenide; Integrated circuit measurements; Performance evaluation; Pulse generation; Pulse measurements; Sampling methods; Time measurement; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-7803-1984-2
DOI :
10.1109/CPEM.1994.333312
