Title :
3D modeling and simulation of heat transfer for internal channel cooling of 3D-chip stacks
Author :
Zhang, Jing ; Guidotti, Daniel ; Guo, Xueping ; Zhou, Jing ; Cao, Liqiang ; Yu, Daquan ; Wan, Lixi
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
This paper presents a configuration of 3D-chip stacks with internal channel cooling that include high thermal conductivity layers, channels for heat transport by pneumatic fluid flow, regulation of fluid velocity by channel obstructions bumps, enhanced thermal conductivity across the channel by metal spacers, wiring re-distribution layers (RDL) and electrical continuity across the cooling channels. Finite element (FEM) method was used to present numerical simulations based on the configuration. The temperature distribution, hotspot and average velocity in the channel of three layers under different gas pressure drop and different power density are investigated. The simulation results show that the gas cooling 3D-chip stacks construction can dissipate 30W/cm2. Compared with water channel cooling, the gas cooling structure is of simpler construction and a small leak does not always require immeriate system shut-down.
Keywords :
cooling; finite element analysis; integrated circuit packaging; numerical analysis; thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; channel obstructions bumps; electrical continuity; finite element method; fluid velocity; gas cooling 3D-chip stacks construction; gas cooling structure; gas pressure drop; heat transfer 3D modeling; heat transfer simulation; heat transport; high thermal conductivity layers; internal channel cooling; metal spacers; numerical simulations; pneumatic fluid flow; power density; temperature distribution; wiring re-distribution layers; Conductivity; Cooling; Copper; Fluids; Heating; Temperature distribution; Thermal conductivity;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6066891