Title :
Simulation studies on PECVD SiO2 process aiming at TSV application
Author :
Yang, Fangdong ; Zhu, Fuyun ; Yu, Min ; Tian, Dayu ; Zhang, Haixia ; Jin, Yufeng
Author_Institution :
Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing, China
Abstract :
A simulation for studying the process of plasma enhanced chemical vapor deposition (PECVD) technology, which is a key process in through-silicon-via (TSV) technology, is proposed in this paper. Elementary models (including ions and neutral particles direct incidence, re-emission and so on) corresponding to the mechanism of PECVD are included, which contributes to the morphology of SiO2 film deposition. By selecting proper parameters of models such as flux of particles and sticking coefficient (Sc), the effect of different particles on deposition and the step-coverage effect of trenches with different aspect ratios are studied.
Keywords :
plasma CVD; silicon compounds; PECVD; TSV application; elementary models; plasma enhanced chemical vapor deposition; step coverage effect; sticking coefficient; through silicon via technology; Atmospheric modeling; Films; Ions; Packaging; Surface morphology; Surface treatment; Through-silicon vias;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6066915
