DocumentCode
2185859
Title
Parity-controlled charge modulation of the supercurrent in the single electron transistor
Author
Joyez, P. ; Vion, D. ; Bouchiat, V. ; Esteve, D. ; Devoret, M.H.
Author_Institution
Service de Phys. de l´Etat Condense, Gif-sur-Yvette, France
fYear
1994
fDate
June 27 1994-July 1 1994
Firstpage
368
Lastpage
369
Abstract
We have measured the parity-controlled charge modulation of the supercurrent in a superconducting single electron transistor, at different magnetic field and temperatures. We observed the characteristic features of the poisoning of the supercurrent enhancement.<>
Keywords
charge measurement; electron device testing; modulation; superconducting junction devices; transistors; canonical conjugation; gate charge; magnetic field; parity-controlled charge modulation; poisoning; single electron transistor; superconducting single electron transistor; supercurrent; supercurrent enhancement; temperature; Charge measurement; Circuits; Current measurement; Fluctuations; Josephson junctions; Lead; Magnetic field measurement; Single electron transistors; Superconducting filters; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on
Conference_Location
Boulder, CO, USA
Print_ISBN
0-7803-1984-2
Type
conf
DOI
10.1109/CPEM.1994.333354
Filename
333354
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