Title :
Scaling limits of rectangular and trapezoidal channel FinFETs
Author :
Mohseni, J. ; Meindl, J.D.
Author_Institution :
Georgia Inst. Of Technol., Atlanta, GA, USA
Abstract :
Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, Double-gate MOSFET, etc. Next we present a complete comparison between ideal rectangular FinFETs and trapezoidal FinFETs. Finally, for the first time, we present the ultimate limit for scaling of rectangular and trapezoidal FinFETs.
Keywords :
MOSFET; multigate MOSFET; rectangular channel FinFET; saling limit; tigate FinFET; trapezoidal channel FinFET; Capacitors; Etching; Frequency modulation; Logic gates; Performance evaluation; Semiconductor device modeling;
Conference_Titel :
Bioengineering (ENBENG), 2013 IEEE 3rd Portuguese Meeting in
Conference_Location :
Braga
Print_ISBN :
978-1-4673-4859-1
DOI :
10.1109/ENBENG.2013.6518425