• DocumentCode
    2185878
  • Title

    Scaling limits of rectangular and trapezoidal channel FinFETs

  • Author

    Mohseni, J. ; Meindl, J.D.

  • Author_Institution
    Georgia Inst. Of Technol., Atlanta, GA, USA
  • fYear
    2013
  • fDate
    20-23 Feb. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, Double-gate MOSFET, etc. Next we present a complete comparison between ideal rectangular FinFETs and trapezoidal FinFETs. Finally, for the first time, we present the ultimate limit for scaling of rectangular and trapezoidal FinFETs.
  • Keywords
    MOSFET; multigate MOSFET; rectangular channel FinFET; saling limit; tigate FinFET; trapezoidal channel FinFET; Capacitors; Etching; Frequency modulation; Logic gates; Performance evaluation; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bioengineering (ENBENG), 2013 IEEE 3rd Portuguese Meeting in
  • Conference_Location
    Braga
  • Print_ISBN
    978-1-4673-4859-1
  • Type

    conf

  • DOI
    10.1109/ENBENG.2013.6518425
  • Filename
    6518425