Title :
Residual stress estimation of NCF-bonded COG packages during manufacturing process
Author :
Guo, Jie ; Tao, Bo ; Yin, Zhouping
Author_Institution :
State Key Lab. of Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Nonconductive film (NCF) is more and more used for chip-on-glass (COG) bonding instead of anisotropic conductive film (ACF), due to its advantages of finer bump pitch and cost reduction. However, the chemical reaction of NCF requires, and experiences show that excessive warpage and residual stress will usually be induced because NCF curing requires higher temperature and bonding pressure than ACF, which is one of the major reliability problems encountered in industry. In this paper, an internal force analysis model of the metal-coated polymer bump is presented, and the effect of bonding parameters on residual stress is investigated, and an improved ZGS´s mechanical model, characterizing various viscoelastic behaviors of polymer, is proposed to estimate the residual stress in metal-coated polymer bumps. After that, the effects of NCF´s material properties and the bonding parameters on the deformation and residual stress distributions are discovered.
Keywords :
bonding processes; chip scale packaging; conducting polymers; curing; elastic deformation; fine-pitch technology; internal stresses; viscoelasticity; ACF; COG bonding; NCF curing; NCF material properties; NCF-bonded COG packages; ZGS mechanical model; anisotropic conductive film; bonding parameters; bonding pressure; chemical reaction; chip-on-glass bonding; cost reduction; deformation; excessive warpage; finer bump pitch; internal force analysis model; manufacturing process; metal-coated polymer bumps; nonconductive film; residual stress distributions; residual stress estimation; viscoelastic polymer behaviors; Bonding; Force; Metals; Polymers; Residual stresses; Springs; Substrates;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6066947