Thermal properties of semiconductor oxide-confinement vertical-cavity lasers

Author

Ivanov, P.S. ; Sukkoivanov, I.A. ; Lysak, V.V. ; Kublik, A.V.

Author_Institution

Kharkiv State Univ. of Radio Electron., Ukraine

fYear

2000

fDate

2000

Firstpage

53

Lastpage

56

Abstract

We present results of a thermodynamic model application for the investigation of the oxide-confinement vertical-cavity laser. By including carrier diffusion and thermal propagation equations in the laser dynamics, one can take into account a nonuniform electron transport and heating in the non-symmetrical laser structure. The observed model is useful in analysis of laser dynamics and to further parameter optimization of the vertical-cavity laser structure

Keywords

laser theory; optimisation; semiconductor device models; semiconductor lasers; surface emitting lasers; symmetry; VCSEL; carrier diffusion; laser dynamics; non-symmetrical laser structure; nonuniform electron transport; oxide-confinement vertical-cavity laser; parameter optimization; semiconductor oxide-confinement vertical-cavity lasers; thermal propagation equations; thermal properties; thermodynamic model application; vertical-cavity laser structure; Electrons; Laser modes; Power lasers; Quantum well lasers; Ring lasers; Semiconductor lasers; Temperature; Thermal conductivity; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling, 2000. Proceedings of LFNM 2000. 2nd International Workshop on

Conference_Location

Kharkiv

Print_ISBN

0-7803-6380-9

Type

conf

DOI

10.1109/LFNM.2000.854039

Filename

854039