• DocumentCode
    2188158
  • Title

    Performance-augmented CMOS using back-end uniaxial strain

  • Author

    Belford, R.E. ; Wei Zhao ; Potashnik, J. ; Qingmin Liu ; Seabaugh, A.

  • Author_Institution
    Fac. of Sci. & Eng., Edinburgh Univ., UK
  • fYear
    2002
  • fDate
    24-26 June 2002
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    In this paper we report the first detailed electrical characterization of uniaxially-strained fully-depleted silicon-on-insulator (FD-SOI) n and p-channel MOSFETs. Using the back-end approach, an in-plane, tensile strain was applied to the FD SOI MOSFETs after device manufacture. Dies were thinned to membrane dimensions and then affixed to curved substrates. The die transfer process minimizes edge effects and spurious membrane behavior.
  • Keywords
    MOSFET; silicon-on-insulator; CMOS technology; FD-SOI MOSFET; back-end uniaxial strain; electrical characteristics; Biomembranes; Capacitive sensors; Electron mobility; MOSFETs; Rough surfaces; Scattering; Silicon; Tensile strain; Testing; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2002. 60th DRC. Conference Digest
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-7317-0
  • Type

    conf

  • DOI
    10.1109/DRC.2002.1029496
  • Filename
    1029496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2188158