Title :
A novel variational approach for modeling sub-0.1 micron MOS devices including Quantum Mechanical interface charge confinement effects
Author :
Gunther, N.G. ; Mutlu, A.A. ; Rahman, M.
Author_Institution :
Dept. of Electr. Eng., Santa Clara Univ., CA, USA
Abstract :
In this work we develop and demonstrate a novel variational methodology for modeling deep sub-micron (10 nm-100 nm) three-dimensional (3D) MOS devices that includes the important Quantum Mechanical (QM) interface charge confinement effect.
Keywords :
MIS devices; semiconductor device models; variational techniques; 10 to 100 nm; deep-sub-micron three-dimensional MOS device; quantum mechanical interface charge confinement; variational model; Capacitance; Doping; Electrostatics; Fluctuations; MOS devices; Matter waves; Poisson equations; Quantum mechanics; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029510
