RF noise in deep sub-/spl mu/m MOSFETs and proposed solution

Author

Huang, C.H. ; Lai, C.H. ; Hsieh, J.C. ; Liu, J. ; Chin, A.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2002

fDate

24-26 June 2002

Firstpage

71

Lastpage

72

Abstract

Anomalous dependence of finger number on noise figure (NF) is observed for 0.18 /spl mu/m and 0.13 /spl mu/m MOSFETs. A lowest NF of 0.93 dB is measured for 0.18 /spl mu/m MOSFET at 5.8 GHz using 50 fingers but increases with either increasing or decreasing finger number. The NF of 0.13 /spl mu/m devices have larger value and continuously decreases with increasing finger number. This is due to the combined effect of reducing gate resistance and increasing substrate loss with increasing finger number.

Keywords

MOSFET; electric resistance; losses; microwave field effect transistors; semiconductor device measurement; semiconductor device noise; 0.13 micron; 0.18 micron; 0.93 dB; 5.8 GHz; MOSFET; NF; RF noise; finger number; gate resistance; noise figure; substrate loss; Circuit simulation; Electrical resistance measurement; Equivalent circuits; Fingers; Frequency dependence; MOSFETs; Noise figure; Noise measurement; Radio frequency; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2002. 60th DRC. Conference Digest

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-7317-0

Type

conf

DOI

10.1109/DRC.2002.1029519

Filename

1029519