DocumentCode :
2188716
Title :
RRAM based synaptic devices for neuromorphic visual systems
Author :
Kang, J.F. ; Gao, B. ; Huang, P. ; Liu, L.F. ; Liu, X.Y. ; Yu, H.Y. ; Yu, S. ; Wong, H.-S.Philip
Author_Institution :
Institute of Microelectronics, Peking University, Beijing, China
fYear :
2015
fDate :
21-24 July 2015
Firstpage :
1219
Lastpage :
1222
Abstract :
Neuromorphic computing is an attractive computation paradigm with the features of massive parallelism, adaptivity to the complex input information, and tolerance to errors. As one of the most crucial components in a neuromorphic system, the electronic synapse requires high device integration density and low-energy consumption. Oxide-based resistive switching devices (RRAM) have emerged as the leading candidate to realize the synapse functions due to the extra-low energy loss per spike. This work will address the design and optimization of oxide-based RRAM synaptic devices and the impacts of the synaptic devices parameters on the performance of neuromorphic visual system. Possible solutions are also provided to suppress the intrinsic variation of the oxide-RRAM based synaptic devices to achieve high recognition accuracy and efficiency of neuromorphic visual systems
Keywords :
Accuracy; Neuromorphics; Neurons; Resistance; Switches; Training; Visual systems; Neural Cell; Neuromorphic Computing; RRAM; Synapse;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Digital Signal Processing (DSP), 2015 IEEE International Conference on
Conference_Location :
Singapore, Singapore
Type :
conf
DOI :
10.1109/ICDSP.2015.7252074
Filename :
7252074
Link To Document :
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