Title :
SiGe-channel 0.1-/spl mu/m pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD
Author :
Lee, D. ; Sakuraba, M. ; Matsuura, T. ; Murota, J. ; Tsuchiya, T.
Author_Institution :
Lab. for Electron. Intelligent Syst., Tohoku Univ., Sendai, Japan
Abstract :
As the feature size of MOSFETs becomes increasingly small, the super self-aligned process is extremely important for the progress of ULSIs. The improvement of carrier mobility in the channel region is also indispensable. It has been reported that the introduction of high-quality Si/sub 1-x/Ge/sub x/ with x/spl ap/0.5 in the channel region drastically improves the pMOSFET performance. In this paper, it is shown that SiGe-channel 0.1-/spl mu/m pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe chemical vapor deposition (CVD) have been successfully realized. The schematic device structure is described along with the fabrication process flow.
Keywords :
Ge-Si alloys; MOSFET; ULSI; boron; carrier mobility; chemical vapour deposition; semiconductor materials; 0.1 micron; MOSFET feature size; SiGe-channel pMOSFET; SiGe:B; ULSI; channel region carrier mobility; chemical vapor deposition; pMOSFET performance; selective in-situ SiGe:B CVD; super self-aligned ultra-shallow junctions; Electrodes; Fabrication; Flowcharts; MOSFET circuits; Threshold voltage;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029525
