Title :
GaAs Schottky varactor diode optimization for high-performance nonlinear transmission lines
Author :
Sawdai, D. ; Ko, D. ; Kintis, M. ; Maas, S. ; Zhang, X. ; Valdes, S. ; Garber, E. ; Barber, G. ; Quach, E. ; Newman, J. ; Fong, F.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
Nonlinear transmission lines (NLTLs) using Schottky diodes as varactor loads provide significant performance and efficiency advantages for both frequency multiplication and phase shifting applications that will benefit comb generator and phased array applications, respectively. Prior NLTL optimization has been limited only to analytical studies of specific diode profiles. This paper describes, for the first time, the optimization of NLTL performance through the design, simulation, and fabrication of five different experimental GaAs diode doping profiles. Fabricated device and circuit data from the different wafers are presented and compared. To the knowledge of the authors, these NLTLs demonstrate the least conversion loss for any comb generators driven at 1 GHz.
Keywords :
III-V semiconductors; Schottky diodes; doping profiles; frequency multipliers; gallium arsenide; high-frequency transmission lines; optimisation; phase shifters; semiconductor device measurement; semiconductor device models; varactors; 1 GHz; GaAs; GaAs Schottky varactor diode optimization; NLTL conversion loss; comb generator driving frequency; diode doping profile design/simulation/fabrication; diode profiles; frequency multiplication; high-performance nonlinear transmission lines; phase shifting applications; phased array applications; varactor loads; Circuit simulation; Design optimization; Doping profiles; Fabrication; Frequency conversion; Gallium arsenide; Phased arrays; Schottky diodes; Transmission lines; Varactors;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029527
