Title :
A novel horizontal current bipolar transistor (HCBT) for vertical BiCMOS integration
Author :
Suligoj, T. ; Biljanovic, P. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
In order to improve the integrability with vertical MOS processes, a new HCBT process is developed, fabricated and presented in this work for the first time. Its fabrication process is simplified mainly by reducing the number of lithography masks to 5 (including 1 metal layer), using CMP and etch-back techniques for isolation and the reduction of parasitic capacitances, and self-aligned base implantation. Also, a new HCBT technology is applicable to both bulk Si and SOI substrates, whereas the existing lateral bipolar transistors (LBTs) are processed exclusively on SOI.
Keywords :
BiCMOS integrated circuits; bipolar transistors; capacitance; chemical mechanical polishing; etching; lithography; masks; semiconductor device manufacture; semiconductor device measurement; CMP; HCBT fabrication process; LBT; SOI substrates; Si; bulk Si substrates; horizontal current bipolar transistors; isolation etch-back techniques; lateral bipolar transistors; lithography masks; metal layers; parasitic capacitance reduction; self-aligned base implantation; vertical BiCMOS integration; vertical MOS processes; Annealing; BiCMOS integrated circuits; Bipolar transistors; Doping; Etching; Fabrication; Ion implantation; Isolation technology; Lithography; Planarization;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029528
