Title :
Optoelectronic conversion through 850nm band single mode Si/sub 3/N/sub 4/ photonic waveguides for Si-on-chip integration
Author :
Matsuura, T. ; Yamada, A. ; Murota, J. ; Tamechika, E. ; Wada, K. ; Kimerling, L.C.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
We have directly coupled Si PIN vertical-junction diode photodetectors and Si/sub 3/N/sub 4/ photonic waveguides on the same horizontal plane of an SOI wafer using a standard Si process. For the stress-free CVD deposition of Si/sub 3/N/sub 4/, the core thickness was set at 200 nm. The single-mode is solved by simulation for the 0.7 /spl mu/m-wide waveguide at a wavelength of 850 nm. Photo-electronic conversion characteristics were examined by introducing a 650 nm and 850 nm laser beam from a rounded-end optical fiber to the on-chip waveguide. Efficient optoelectronic conversion is confirmed through an 850 nm band single mode Si/sub 3/N/sub 4/ photonic waveguide for Si-on-chip integration.
Keywords :
chemical vapour deposition; integrated optoelectronics; optical interconnections; optical planar waveguides; optical testing; p-i-n photodiodes; silicon compounds; wide band gap semiconductors; 0.7 micron; 200 nm; 650 nm; 850 nm; SOI wafer horizontal plane; Si PIN vertical-junction diode photodetectors; Si-on-chip integration; Si/sub 3/N/sub 4/; Si/sub 3/N/sub 4/ single mode photonic waveguides; laser beams; on-chip waveguide; optoelectronic conversion; photo-electronic conversion characteristics; photonic interconnections; rounded-end optical fibers; silicon process; simulation single-mode solution; stress-free CVD deposition core thickness; waveguide wavelength; Delay; Laboratories; Optical coupling; Optical device fabrication; Optical fiber losses; Optical fibers; Optical scattering; Optical waveguides; Photodetectors; Semiconductor waveguides;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029530