Simulation of the quantum-confined Stark effect in a single InGaN quantum dot

Author

Lee, Kwan Hee ; Robinson, James W. ; Rice, James H. ; Na, Jong Ho ; Taylor, Robert A. ; Oliver, Rachel A. ; Kappers, Menno J. ; Humphreys, Colin J.

Author_Institution

Dept. of Phys., Oxford Univ., UK

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

5

Lastpage

6

Abstract

By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.

Keywords

electric moments; gallium compounds; indium compounds; numerical analysis; quantum confined Stark effect; semiconductor quantum dots; 3D self-consistent numerical simulation; InGaN; InGaN quantum dot; externally-applied lateral electric field; permanent dipole moment; polarizability components; quantum-confined Stark effect; Capacitive sensors; Energy states; Excitons; Gallium nitride; Physics; Poisson equations; Quantum dots; Semiconductor process modeling; Stark effect; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518107

Filename

1518107