Title :
Memory device based on a ferroelectric tunnel junction
Author :
Contreras, J.R. ; Schubert, J. ; Kohlstedt, H. ; Waser, R.
Abstract :
For the first time tunnel junctions with a ferroelectric barrier (FTJ) have been prepared and a bi-stable and highly reproducible hysteresis in the I-V curve and the bias dependence of the dynamic conductance has been measured. This behavior will be discussed in the framework of a possible new effect based on the interplay between the polarization state in the barrier and direct electron tunneling through the barrier.
Keywords :
dielectric hysteresis; ferroelectric storage; tunnelling; I-V characteristics; barrier polarization state; bias dependence; dynamic conductance; electron tunneling; ferroelectric tunnel junction; hysteresis; memory device; Atomic force microscopy; Capacitors; Electrodes; Electrons; Ferroelectric films; Ferroelectric materials; Hysteresis; Polarization; Tunneling; Voltage;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029532
